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EB-111 Semiconductor Fundamentals I

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Description

The EB-112 is a single board, comprehensive instructional module designed to teach advanced concepts of Semiconductor Fundamentals to technology students.

The module can be operated as a stand-alone unit or integrated to the newly developed EB-2000 Computer Managed Laboratory.

Objectives

  • Plot the drain characteristic curves from measured values

  • Plot the transfer characteristic curve from measured values

  • Determine the channel resistance (RDS) from measured values

  • Connect the FET in an attenuator circuit.

  • Determine the transconductance of the FET from measured values

  • Measure the DC values in the FET amplifier circuit

  • Determine the frequency response from measured values

  • Determine how changes in the load resistor change the voltage gain

  • Plot the drain characteristic curves of the VMOS FET from measured values

  • Connect the VMOS FET as a digital switch then determine the switching characteristics

  • Connect the VMOS FET as an analog switch then determine the switching characteristics

  • Determine the characteristics of a thyristor (SCR)

  • Connect the thyristor to obtain forward conduction

  • Determine the holding current

  • Determine the triggering voltage and current.

  • Measure the firing angle in a phase control circuit

  • Measure the output voltage of a variable power supply that uses the phase control of a thyristor

  • Use the oscilloscope to determine the firing angle of the triac when it is connected in the phase shift triggering circuit

  • Measure the voltages in the triac circuit.

  • Sketch the waveforms in the triac circuit

  • Determine the voltages and waveform of an operating circuit

  • Test the various stages in a circuit and locate the faulty stage

  • Locate the fault within the stage of a circuit

 

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